Impact of various cleaning procedures on p‐GaN surfaces

نویسندگان

چکیده

This work discusses the influence of different cleaning procedures on p-gallium nitride (GaN) grown sapphire by metal–organic chemical vapor deposition. The cleaned p-GaN surface was transferred into an ultrahigh vacuum chamber and studied X-ray photoelectron spectrometer, revealing that a with so-called “piranha” procedure results in low carbon oxygen concentrations surface. Contrary, solely uses ethanol represents simple but leads to increase contaminations Afterward, samples underwent subsequential thermal at various temperatures achieve atomically clean spectroscopy (XPS) measurements revealed residual Thus, treatment under did not entirely remove these organic contaminations, although reduced their peak intensities. complete removal contaminants only achieved argon ion sputtering, which is accompanied strong depletion nitrogen treatments cause large number defects preventing formation negative electron when activated thin layer cesium.

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ژورنال

عنوان ژورنال: Surface and Interface Analysis

سال: 2023

ISSN: ['0142-2421', '1096-9918']

DOI: https://doi.org/10.1002/sia.7207